au.\*:("KLAUSMANN E")
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CHARACTERIZATION OF MOS STRUCTURES WITH BURIED LAYERSFAHRNER WR; KLAUSMANN E.1978; PHYS. STATUS SOLIDI, A; DDR; DA. 1978; VOL. 50; NO 2; PP. 433-444; ABS. GER; BIBL. 26 REF.Article
STATIC TECHNIQUE FOR PRECISE MEASUREMENTS OF SURFACE POTENTIAL AND INTERFACE STATE DENSITY IN MOS STRUCTURES.ZIEGLER K; KLAUSMANN E.1975; APPL. PHYS. LETTERS; U.S.A.; DA. 1975; VOL. 26; NO 7; PP. 400-402; BIBL. 18 REF.Article
PROPERTIES OF THE INTERFACE CHARGE INHOMOGENEITIES IN THE THERMALLY GROWN SI-SIO2 STRUCTURE.ZIEGLER K; KLAUSMANN E.1976; APPL. PHYS. LETTERS; U.S.A.; DA. 1976; VOL. 28; NO 11; PP. 678-681; BIBL. 12 REF.Article
TRANSIENT CAPACITANCE MEASUREMENTS OF INTERFACE STATES ON THE INTENTIONALLY CONTAMINATED SI-SIO2 INTERFACESCHULZ M; KLAUSMANN E.1979; APPL. PHYS.; DEU; DA. 1979; VOL. 18; NO 2; PP. 169-175; BIBL. 12 REF.Article
DETERMINATION OF THE SEMICONDUCTOR DOPING PROFILE RIGHT UP TO ITS SURFACE USING THE MIS CAPACITOR.ZIEGLER K; KLAUSMANN E; KAR S et al.1975; SOLID-STATE ELECTRON.; G.B.; DA. 1975; VOL. 18; NO 2; PP. 189-198; BIBL. 22 REF.Article